18452581. CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Miao-Syuan Fan of Hsinchu (TW)
Ta-Hsiang Kung of New Taipei (TW)
CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18452581 titled 'CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate and a suspended semiconductor structure with a source region, a drain region, and a channel region. The channel region contains a doped two-dimensional material layer on its upper surface. The device also includes an interfacial layer surrounding the channel region and a gate electrode surrounding the interfacial layer.
- The semiconductor device includes a suspended semiconductor structure with a source, drain, and channel region.
- The channel region contains a doped two-dimensional material layer on its upper surface.
- An interfacial layer surrounds the channel region and includes the doped two-dimensional material layer.
- A gate electrode surrounds the interfacial layer.
Potential Applications
- This technology can be used in the development of high-performance transistors.
- It can be applied in the manufacturing of advanced electronic devices such as smartphones, computers, and tablets.
- The semiconductor device can be used in the production of integrated circuits for various applications in the electronics industry.
Problems Solved
- The use of a doped two-dimensional material layer in the channel region improves the performance and efficiency of the semiconductor device.
- The suspended semiconductor structure allows for better control of the electrical properties and reduces interference.
- The interfacial layer helps to enhance the overall performance and stability of the device.
Benefits
- The semiconductor device offers improved performance and efficiency compared to traditional devices.
- It allows for better control of electrical properties and reduces interference.
- The technology enables the production of advanced electronic devices with higher performance and reliability.
Original Abstract Submitted
A semiconductor device includes a substrate, a semiconductor structure suspending over the substrate and comprising a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a doped two-dimensional (2D) material layer comprising a first portion on an upper surface of the channel region. The semiconductor device also includes an interfacial layer surrounding the channel region including the first portion of the doped 2D material layer, and a gate electrode surrounding the interfacial layer.
