17699463. FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR
Organization Name
Inventor(s)
FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17699463 titled 'FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR
Simplified Explanation
The patent application describes a field effect transistor (FET) that includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a channel made of a two-dimensional (2D) material, a 2D material electrode bonding layer, and a stressor. The stressor is designed to apply a tensile strain to the 2D material electrode bonding layer.
- The FET includes a substrate, gate electrode, insulating layer, source electrode, drain electrode, channel made of a 2D material, 2D material electrode bonding layer, and a stressor.
- The stressor is configured to apply a tensile strain to the 2D material electrode bonding layer.
- The tensile strain helps improve the performance of the FET.
- The 2D material electrode bonding layer enhances the connection between the source and drain electrodes and the channel.
- The FET can be used in various electronic devices and systems.
Potential Applications
- Electronics industry
- Semiconductor devices
- Integrated circuits
- Consumer electronics
- Communication systems
Problems Solved
- Improves the performance of field effect transistors
- Enhances the connection between electrodes and the channel
- Increases the efficiency and reliability of electronic devices
Benefits
- Improved performance of field effect transistors
- Enhanced connection between electrodes and the channel
- Increased efficiency and reliability of electronic devices
- Potential for smaller and more efficient electronic systems
Original Abstract Submitted
Provided are a field effect transistor, an electronic apparatus including the same, and a method of manufacturing the field effect transistor. The field effect transistor may include a substrate; a gate electrode on the substrate; an insulating layer on the gate electrode; a source electrode on the insulating layer; a drain electrode apart from the source electrode; a channel between the source electrode and the drain electrode and including a two-dimensional (2D) material; a 2D material electrode bonding layer adjacent to the source electrode and the drain electrode; and a stressor adjacent to the 2D material electrode bonding layer. The stressor may be configured to apply a tensile strain to the 2D material electrode bonding layer.
