17933078. NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract (International Business Machines Corporation)
Contents
- 1 NON-PLANAR METAL-INSULATOR-METAL STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-PLANAR METAL-INSULATOR-METAL STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
NON-PLANAR METAL-INSULATOR-METAL STRUCTURE
Organization Name
International Business Machines Corporation
Inventor(s)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Reinaldo Vega of Mahopac NY (US)
Takashi Ando of Eastchester NY (US)
David Wolpert of Poughkeepsie NY (US)
NON-PLANAR METAL-INSULATOR-METAL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933078 titled 'NON-PLANAR METAL-INSULATOR-METAL STRUCTURE
Simplified Explanation
The semiconductor device described in the abstract includes an innovative structure of subtractive interconnects and damascene interconnects, with interleaved/nested configurations at different wiring levels. This design allows for efficient routing of electrical signals within the device.
- The semiconductor device features a subtractive-etched interconnect wiring level with first electrodes at a first potential and second electrodes at a different second potential, interleaved to optimize space utilization.
- Additionally, the device includes a damascene interconnect wiring level with other first electrodes at the first potential and other second electrodes at the second potential, also interleaved for enhanced performance.
- The unique structure of the semiconductor device enables improved signal transmission and reduced signal interference, leading to enhanced overall functionality.
Potential Applications
The technology described in the patent application could be applied in various semiconductor devices, such as microprocessors, memory chips, and integrated circuits, to improve signal routing efficiency and performance.
Problems Solved
This technology addresses the challenges of signal interference and inefficient routing in semiconductor devices, providing a solution for optimizing signal transmission and reducing potential errors.
Benefits
The semiconductor device with interleaved/nested subtractive and damascene interconnects offers improved signal integrity, reduced power consumption, and enhanced overall performance compared to traditional wiring configurations.
Potential Commercial Applications
The innovative semiconductor device design could find applications in the electronics industry, particularly in the development of high-performance computing systems, data centers, and consumer electronics.
Possible Prior Art
One potential prior art in this field could be the use of traditional subtractive or damascene interconnect structures in semiconductor devices, without the interleaved/nested configuration described in the patent application.
Unanswered Questions
How does this technology impact the overall size of semiconductor devices?
The abstract does not provide information on whether the interleaved/nested structure affects the overall size of the semiconductor device and if there are any size constraints associated with this design.
What manufacturing processes are required to implement this technology?
The abstract does not detail the specific manufacturing processes needed to create the interleaved/nested subtractive and damascene interconnects in the semiconductor device, leaving a gap in understanding the practical implementation of this innovation.
Original Abstract Submitted
A semiconductor device including an interleaved/nested structure of subtractive interconnects and damascene interconnects. The semiconductor device includes a subtractive-etched interconnect wiring level having subtractive interconnects and a damascene interconnect wiring level having damascene interconnects. The subtractive-etched interconnect wiring level includes first electrodes that have a first potential second electrodes that have a second potential different from the first potential, with the second electrodes generated to interleave the first electrodes. The semiconductor also includes a damascene interconnect wiring level that includes other first electrodes having the first potential, and other second electrodes having the second potential. In the damascene interconnect wiring level, the other second electrodes are also interleaved by the other first electrodes.
