17567659. Semiconductor Device and Method of Forming Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
Semiconductor Device and Method of Forming Same
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chien-I Kuo of Chiayi County (TW)
Chii-Horng Li of Zhubei City (TW)
Semiconductor Device and Method of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 17567659 titled 'Semiconductor Device and Method of Forming Same
Simplified Explanation
The patent application describes a method for fabricating a semiconductor structure with multiple layers and nanostructures. The method involves depositing two semiconductor layers over a substrate and patterning them to form nanostructures and a semiconductor fin. A recess is then formed in the nanostructures, exposing the semiconductor fin.
- The first layer is epitaxially grown in the recess, with a portion of it along the first sidewall of the nanostructure and another portion along the semiconductor fin. The first portion of the first layer has two sidewalls extending towards the middle of the recess and a surface between them. This portion is physically separated from the second portion.
- The second layer is then epitaxially grown over both portions of the first layer, physically connecting them together.
Potential applications of this technology:
- Semiconductor devices: The method can be used to fabricate advanced semiconductor devices with improved performance and functionality.
- Nanoelectronics: The resulting semiconductor structure can be used in nanoelectronic devices, such as transistors, sensors, and memory devices.
Problems solved by this technology:
- Enhanced device performance: The method allows for the precise formation of multiple layers and nanostructures, enabling the fabrication of high-performance semiconductor devices.
- Integration of different materials: The epitaxial growth of different layers allows for the integration of different semiconductor materials, expanding the range of possible device functionalities.
Benefits of this technology:
- Improved device functionality: The method enables the fabrication of complex semiconductor structures, leading to enhanced device functionality and performance.
- Material integration: The ability to epitaxially grow different layers allows for the integration of different semiconductor materials, enabling the development of new types of devices.
- Precise control: The method provides precise control over the formation of nanostructures and layers, ensuring the desired device characteristics and performance.
Original Abstract Submitted
A method includes depositing a first semiconductor layer and a second semiconductor layer over a substrate; patterning the first semiconductor layer, the second semiconductor layer, and the substrate to form a first nanostructure, a second nanostructure, and a semiconductor fin; forming a recess in the first nanostructure and the second nanostructure, the recess exposing the semiconductor fin; epitaxially growing a first layer in the recess, a first portion of the first layer being disposed along a first sidewall of the first nanostructure, a second portion of the first layer being disposed along the semiconductor fin, the first portion of the first layer comprising two sidewalls extending toward a middle of the recess, the first portion of the first layer further comprising a first surface most distal from the first sidewall and directly interposed between the two sidewalls, the first portion being physically separated from the second portion; and epitaxially growing a second layer over the first portion of the first layer and over the second portion of the first layer, the second layer physically connecting the first portion of the first layer to the second portion of the first layer.
