18494384. DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS simplified abstract (Intel Corporation)

DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS

Organization Name

Intel Corporation

Inventor(s)

Abhishek A. Sharma of Hillsboro OR (US)

Van H. Le of Beaverton OR (US)

Gilbert Dewey of Hillsboro OR (US)

Jack T. Kavalieros of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Benjamin Chu-kung of Portland OR (US)

Yih Wang of Portland OR (US)

Tahir Ghani of Portland OR (US)

DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18494384 titled 'DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS

Simplified Explanation

• • Explanation:**

The patent application describes dual gate trench shaped thin film transistors, which have a non-planar semiconductor material layer with two portions extending over different gate structures.

• The thin film transistor structure includes a non-planar semiconductor material layer with a first portion extending laterally over a first gate dielectric layer and a first gate electrode structure.
• The second portion of the semiconductor material layer extends along a trench over the first gate dielectric layer.
• A second gate electrode structure is at least partially within the trench, with a second gate dielectric layer between the second gate electrode structure and the first portion of the semiconductor material layer.

• • Potential Applications:**
• High-performance display technologies
• Integrated circuits for electronic devices
• Power management systems

• • Problems Solved:**
• Improved transistor performance and efficiency
• Enhanced control over transistor operation
• Reduction of leakage currents

• • Benefits:**
• Higher transistor density on a chip
• Increased speed and reliability of electronic devices
• Lower power consumption and improved battery life

Original Abstract Submitted

Disclosed herein are dual gate trench shaped thin film transistors and related methods and devices. Exemplary thin film transistor structures include a non-planar semiconductor material layer having a first portion extending laterally over a first gate dielectric layer, which is over a first gate electrode structure, and a second portion extending along a trench over the first gate dielectric layer, a second gate electrode structure at least partially within the trench, and a second gate dielectric layer between the second gate electrode structure and the first portion.