17957359. SINGULATION OF INTEGRATED CIRCUIT PACKAGE SUBSTRATES WITH GLASS CORES simplified abstract (Intel Corporation)

SINGULATION OF INTEGRATED CIRCUIT PACKAGE SUBSTRATES WITH GLASS CORES

Organization Name

Intel Corporation

Inventor(s)

Yiqun Bai of Chandler AZ (US)

Dingying Xu of Chandler AZ (US)

Srinivas Pietambaram of Chandler AZ (US)

Hongxia Feng of Chandler AZ (US)

Gang Duan of Chandler AZ (US)

Xiaoying Guo of Chandler AZ (US)

Ziyin Lin of Chandler AZ (US)

Bai Nie of Chandler AZ (US)

Haobo Chen of Chandler AZ (US)

Kyle Arrington of Gilbert AZ (US)

Bohan Shan of Chandler AZ (US)

SINGULATION OF INTEGRATED CIRCUIT PACKAGE SUBSTRATES WITH GLASS CORES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17957359 titled 'SINGULATION OF INTEGRATED CIRCUIT PACKAGE SUBSTRATES WITH GLASS CORES

Simplified Explanation

The integrated circuit (IC) device described in the patent application comprises a glass core substrate with a first surface, a second surface, and a first sidewall. The glass core also includes a conductor within a through-glass via and a build-up layer. Additionally, the glass core has laser-treated areas on the first sidewall, which have a higher nanoporosity compared to other areas of the core.

• Glass core substrate with first and second surfaces, and a first sidewall
• Conductor within a through-glass via and a build-up layer
• Laser-treated areas on the first sidewall with higher nanoporosity

Potential Applications

The technology described in the patent application could be applied in:

• Advanced electronics manufacturing
• Semiconductor industry
• High-speed data processing

Problems Solved

This technology addresses the following issues:

• Improving signal transmission efficiency
• Enhancing device performance
• Increasing reliability of integrated circuits

Benefits

The benefits of this technology include:

• Higher data transfer speeds
• Improved overall device functionality
• Enhanced durability and longevity of integrated circuits

Potential Commercial Applications

Potential commercial applications of this technology could include:

• Production of high-performance computing devices
• Development of advanced communication systems
• Manufacturing of cutting-edge consumer electronics

Possible Prior Art

One possible prior art related to this technology is the use of laser treatment in semiconductor manufacturing to enhance device performance and efficiency.

Unanswered Questions

How does the nanoporosity of the laser-treated areas affect the overall functionality of the integrated circuit device?

The patent application mentions that the laser-treated areas have a higher nanoporosity compared to other areas of the glass core. It would be interesting to explore how this specific characteristic impacts the performance of the device.

What are the specific parameters used for laser treatment in this technology, and how do they contribute to the desired outcomes?

The patent application does not provide detailed information on the parameters of the laser treatment process. Understanding the specific settings and conditions used could shed light on the optimization of this technology for different applications.

Original Abstract Submitted

An integrated circuit (IC) device comprises a substrate comprising a glass core. The glass core comprises a first surface and a second surface opposite the first surface, and a first sidewall between the first surface and the second surface. The glass core may include a conductor within a through-glass via extending from the first surface to the second surface and a build-up layer. The glass cord comprises a plurality of first areas of the glass core and a plurality of laser-treated areas on the first sidewall. A first one of the plurality of laser-treated areas may be spaced away from a second one of the plurality of laser-treated areas. A first area may comprise a first nanoporosity and a laser-treated area may comprise a second nanoporosity, wherein the second nanoporosity is greater than the first nanoporosity.