17569057. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ka-Hing Fung of Zhudong Township (TW)
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17569057 titled 'STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES
Simplified Explanation
The patent application describes a semiconductor device structure and a method for forming it. The structure includes a stack of channel structures over a semiconductor substrate, a gate stack wrapped around the channel structures, a source/drain epitaxial structure adjacent to the channel structures, multiple inner spacers between the gate stack and the source/drain epitaxial structure, and multiple epitaxial structures separating the inner spacers from the source/drain epitaxial structure.
- The semiconductor device structure includes a stack of channel structures, a gate stack, a source/drain epitaxial structure, inner spacers, and epitaxial structures.
- The channel structures are placed over a semiconductor substrate.
- The gate stack wraps around the channel structures.
- The source/drain epitaxial structure is located adjacent to the channel structures.
- Multiple inner spacers are positioned between the gate stack and the source/drain epitaxial structure.
- Multiple epitaxial structures separate the inner spacers from the source/drain epitaxial structure.
Potential Applications
- This semiconductor device structure and method can be used in various electronic devices that require high-performance and efficient semiconductor components.
- It can be applied in the manufacturing of advanced integrated circuits, such as microprocessors, memory chips, and other semiconductor devices.
Problems Solved
- The described structure and method provide improved performance and efficiency in semiconductor devices.
- The use of multiple inner spacers and epitaxial structures helps to optimize the device's functionality and reliability.
- The structure allows for better control of the electrical properties and characteristics of the semiconductor device.
Benefits
- The semiconductor device structure offers enhanced performance and efficiency compared to existing designs.
- The method for forming the structure provides a reliable and cost-effective manufacturing process.
- The use of inner spacers and epitaxial structures improves the overall functionality and reliability of the semiconductor device.
Original Abstract Submitted
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor substrate and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and multiple inner spacers. Each of the inner spacers is between the gate stack and the source/drain epitaxial structure. The semiconductor device structure further includes multiple epitaxial structures separating the inner spacers from the source/drain epitaxial structure.
