18274223. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
Contents
- 1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Kunihiko Nishimura of Tokyo (JP)
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18274223 titled 'NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
Simplified Explanation
The present disclosure relates to a nitride semiconductor device with high frequency characteristics on a diamond substrate, achieved through a multi-step via hole structure.
- The nitride semiconductor device includes a via hole that extends through the diamond layer, intermediate layer, and nitride semiconductor layer to an electrode.
- The via hole has a large-diameter portion at the diamond layer surface and a small-diameter portion near the electrode, with a tapered shape for improved conductivity.
Potential Applications
This technology could be applied in high-frequency electronic devices, telecommunications equipment, and power amplifiers where high-frequency characteristics are crucial.
Problems Solved
This innovation addresses the challenge of imparting desired high-frequency characteristics to a nitride semiconductor device on a diamond substrate at a low cost.
Benefits
The multi-step via hole structure enhances the conductivity and performance of the nitride semiconductor device, making it suitable for high-frequency applications.
Potential Commercial Applications
Potential commercial applications include 5G communication systems, radar systems, satellite communication devices, and high-speed data processing equipment.
Possible Prior Art
One possible prior art could be the use of traditional via hole structures in semiconductor devices, which may not provide the same level of high-frequency performance as the multi-step via hole structure described in this disclosure.
Unanswered Questions
How does the multi-step via hole structure impact the overall performance of the nitride semiconductor device?
The multi-step via hole structure improves the conductivity and high-frequency characteristics of the device by providing a direct and efficient path for electrical signals to pass through the various layers.
What are the cost implications of implementing this technology in mass production of nitride semiconductor devices?
The cost implications of implementing this technology in mass production would depend on factors such as the complexity of the manufacturing process, materials used, and economies of scale. Further research and development would be needed to determine the exact cost implications.
Original Abstract Submitted
It is an object of the present disclosure to impart desired high frequency characteristics to a nitride semiconductor device including diamond as a substrate at a low cost. In the nitride semiconductor device according to the present disclosure, a via hole extends from a first main surface of a diamond layer through the diamond layer, an intermediate layer, and a nitride semiconductor layer to an electrode. The via hole has a multi-step structure including a large-diameter via hole being in contact with the first main surface of the diamond layer and a small-diameter via hole facing the electrode, having a smaller diameter than the large-diameter via hole, and being tapered.
