17878622. SUBSTRATE PROCESSING SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SUBSTRATE PROCESSING SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Songyi Baek of Hwaseong-si (KR)
Youngtack Sim of Hwaseong-si (KR)
Taemin Kim of Seongnam-si (KR)
SUBSTRATE PROCESSING SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17878622 titled 'SUBSTRATE PROCESSING SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The patent application describes a substrate processing system that includes several chambers for performing various treatments on a substrate during semiconductor processing. The system includes an oxygen supply unit, chambers for oxidizing and treating exhaust gases, and a tank for collecting the treated gases.
- The substrate processing system includes a process chamber for performing semiconductor processes on a substrate.
- A first oxygen supply unit provides oxygen gas to the system.
- A first chamber receives the oxygen gas and exhaust gases from the process chamber, and oxidizes the exhaust gases using the supplied oxygen.
- A second chamber receives a treatment gas from the first chamber and burns it.
- A third chamber receives a second treatment gas from the second chamber and performs a wetting treatment.
- A tank is located below the chambers and is connected to each of them, collecting the treated gases.
Potential Applications
- Semiconductor manufacturing processes
- Substrate processing in electronic device production
Problems Solved
- Efficient treatment and disposal of exhaust gases generated during semiconductor processing
- Reduction of environmental impact by properly treating and disposing of harmful gases
Benefits
- Improved environmental sustainability by effectively treating and oxidizing exhaust gases
- Enhanced safety by preventing the release of harmful gases into the atmosphere
- Efficient utilization of treatment gases through a multi-chamber system
Original Abstract Submitted
A substrate processing system includes: a process chamber that performs a semiconductor process on a substrate; a first oxygen supply unit; a first chamber that receives a gas containing oxygen (O) from the first oxygen supply unit, receives exhaust gases discharged from the process chamber, and oxidizes the exhaust gas using the oxygen supplied from the first oxygen supply unit; a second chamber connected to the first chamber, and that receives a first treatment gas from the first chamber and bums the first treatment gas; a third chamber connected to the second chamber, and that receives a second treatment gas from the second chamber and performs a wetting treatment of the second treatment gas; and a tank disposed below the first to third chambers and connected to each of the first to third chambers.
