18059660. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jinseong Heo of Suwon-si (KR)

Yunseong Lee of Osan-si (KR)

Sanghyun Jo of Seoul (KR)

Keunwook Shin of Yongin-si (KR)

Hyeonjin Shin of Suwon-si (KR)

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18059660 titled 'ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes electronic devices and methods of manufacturing them. These devices include a substrate, a gate electrode, a ferroelectric layer, and a carbon layer. The carbon layer has an sp bonding structure.

  • The electronic device includes a substrate, gate electrode, ferroelectric layer, and carbon layer.
  • The carbon layer has an sp bonding structure.
  • The ferroelectric layer is located between the substrate and the gate electrode.

Potential Applications:

  • This technology can be used in various electronic devices such as transistors, memory devices, and sensors.
  • It can be applied in the field of data storage, where the ferroelectric layer can store information.

Problems Solved:

  • The use of a carbon layer with an sp bonding structure helps to improve the performance and stability of the electronic device.
  • The ferroelectric layer provides a reliable and efficient method of storing information.

Benefits:

  • The carbon layer with an sp bonding structure enhances the overall performance of the electronic device.
  • The ferroelectric layer allows for efficient and reliable data storage.
  • The manufacturing methods described in the patent application provide a practical and scalable approach for producing these electronic devices.


Original Abstract Submitted

Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an spbonding structure.

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