18305752. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Chang-Bum Kim of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18305752 titled 'NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The present disclosure is about a non-volatile memory device with a three-dimensional structure, including a first chip with a peripheral circuit and a second chip stacked on the first chip with memory blocks.
- The second chip has a common source line in a plate shape extending in two directions, along with dummy common source lines at the same height level, an upper insulating layer covering them, and dummy contact plugs for a vertical capacitor.
Potential applications of this technology:
- Memory storage devices
- Data storage in electronic devices
- Solid-state drives
Problems solved by this technology:
- Increasing memory storage capacity
- Improving data retention in non-volatile memory devices
- Enhancing performance of electronic devices
Benefits of this technology:
- Higher memory density
- Improved data reliability
- Faster data access speeds
Original Abstract Submitted
The present disclosure relates to a semiconductor device, and more particularly, relates to a non-volatile memory device having a three-dimensional structure. The non-volatile memory device according to an embodiment of the present disclosure includes a first chip having a peripheral circuit therein and a second chip that is stacked on the first chip and that includes memory blocks. The second chip includes a common source line that has a plate shape and extends in first and second directions, first and second dummy common source lines disposed at a same height level as the common source line, an upper insulating layer that covers the common source line and the first and second dummy common source lines, and first and second dummy contact plugs extending in a third direction and that are electrically connected to the first and second dummy common source lines, respectively, and used as electrodes of a vertical capacitor.
