18452311. WASHING SOLUTION AND WASHING METHOD FOR SEMICONDUCTOR SUBSTRATE simplified abstract (FUJIFILM Corporation)

From WikiPatents
Jump to navigation Jump to search

WASHING SOLUTION AND WASHING METHOD FOR SEMICONDUCTOR SUBSTRATE

Organization Name

FUJIFILM Corporation

Inventor(s)

Atsushi Mizutani of Shizuoka (JP)

WASHING SOLUTION AND WASHING METHOD FOR SEMICONDUCTOR SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18452311 titled 'WASHING SOLUTION AND WASHING METHOD FOR SEMICONDUCTOR SUBSTRATE

Simplified Explanation

The present invention is a washing solution and method for cleaning semiconductor devices. The solution is designed to effectively dissolve metal layers containing tungsten and remove dry etching residue.

  • The washing solution has excellent dissolution suppressing performance for tungsten-containing metal layers.
  • The solution also has excellent washing performance for dry etching residue.
  • The washing method is specifically designed for cleaning semiconductor substrates.

Potential Applications

This technology can be applied in the semiconductor industry for cleaning and maintaining semiconductor devices.

Problems Solved

1. Dissolution of metal layers containing tungsten is a challenge in the cleaning process of semiconductor devices. 2. Removing dry etching residue from semiconductor substrates is a complex task.

Benefits

1. The washing solution effectively suppresses the dissolution of tungsten-containing metal layers. 2. The solution efficiently removes dry etching residue from semiconductor substrates. 3. The washing method provides an effective and simplified process for cleaning semiconductor devices.


Original Abstract Submitted

An object of the present invention is to provide a washing solution for a semiconductor device, the washing solution being excellent in the dissolution suppressing performance with respect to a metal layer containing tungsten and also being excellent in the washing performance of a dry etching residue. Another object of the present invention is to provide a washing method for a semiconductor substrate.