18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)

NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE

Organization Name

Panasonic Intellectual Property Management Co., Ltd.

Inventor(s)

Hisayoshi Matsuo of Osaka (JP)

Hideyuki Okita of Osaka (JP)

Masahiro Hikita of Hyogo (JP)

Yasuhiro Uemoto of Shiga (JP)

Manabu Yanagihara of Osaka (JP)

NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18264202 titled 'NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a nitride semiconductor epitaxial substrate with a Si substrate, a nitride semiconductor epitaxial layer, and a mixed crystal layer containing Si, a group III metal element, and a high concentration of carbon (C).

• The substrate includes a Si substrate.
• A nitride semiconductor epitaxial layer is positioned above the Si substrate.
• A mixed crystal layer, containing Si, a group III metal element, and a high concentration of carbon (C), is located between the Si substrate and the nitride semiconductor epitaxial layer.
• The mixed crystal layer has a carbon concentration of at least 1.0×10^20 cm^-3 and a transition metal element concentration of at most 5.0×10^20 cm^-3.

Potential Applications

The technology could be applied in:

• High-power electronic devices
• Optoelectronic devices
• High-frequency devices

Problems Solved

• Enhanced performance of nitride semiconductor devices
• Improved thermal management
• Reduced defects in epitaxial layers

Benefits

• Increased efficiency of electronic devices
• Better heat dissipation
• Enhanced reliability of semiconductor components

Potential Commercial Applications

Optimizing Nitride Semiconductor Epitaxial Substrates for Improved Device Performance

Possible Prior Art

There may be prior art related to the use of mixed crystal layers in semiconductor devices to enhance performance and reliability.

How does the carbon concentration in the mixed crystal layer affect the properties of the nitride semiconductor epitaxial substrate?

The patent application mentions a high concentration of carbon in the mixed crystal layer, but it does not elaborate on the specific effects of this carbon concentration on the substrate's performance and characteristics.

What specific group III metal elements are typically used in the mixed crystal layer, and how do they contribute to the overall properties of the substrate?

While the patent application mentions the presence of a group III metal element in the mixed crystal layer, it does not specify which specific elements are commonly used or how they interact with the other components of the substrate.

Original Abstract Submitted

A nitride semiconductor epitaxial substrate includes: a Si substrate; a nitride semiconductor epitaxial layer disposed above the Si substrate; and a mixed crystal layer disposed between the Si substrate and the nitride semiconductor epitaxial layer, and containing Si and a group III metal element, the mixed crystal layer containing a high concentration of C. The mixed crystal layer has a concentration of at least 1.0×10cm, and a transition metal element concentration of at most 5.0×10cm.