18133242. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Yoonjoong Kim of Suwon-si (KR)
Youngjin Yang of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133242 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with a main chip region and a scribe lane region. First trenches are formed in the scribe lane region, and a well region doped with impurities is provided on the upper part of the main chip region. Align key patterns, which have a stacked structure of silicon germanium and silicon patterns, are formed on the surfaces of the first trenches and the adjacent surfaces of the substrate in the scribe lane region. A multi-bridge channel transistor is then formed on the main chip region.
- The semiconductor device includes a substrate with a main chip region and a scribe lane region.
- First trenches are formed in the scribe lane region.
- A well region doped with impurities is provided on the upper part of the main chip region.
- Align key patterns, with a stacked structure of silicon germanium and silicon patterns, are formed on the surfaces of the first trenches and the adjacent surfaces of the substrate in the scribe lane region.
- A multi-bridge channel transistor is formed on the main chip region.
Potential Applications
- This technology can be applied in the manufacturing of semiconductor devices.
- It can be used in various electronic devices such as smartphones, computers, and tablets.
Problems Solved
- The technology solves the problem of aligning key patterns in the scribe lane region of a semiconductor device.
- It addresses the challenge of forming a multi-bridge channel transistor on the main chip region.
Benefits
- The align key patterns help in accurately aligning different components of the semiconductor device.
- The multi-bridge channel transistor improves the performance and efficiency of the device.
- The technology enables the production of more advanced and compact electronic devices.
Original Abstract Submitted
A semiconductor device includes a substrate including a main chip region and a scribe lane region, wherein first trenches are formed in the scribe lane region. A well region doped with impurities is provided on an upper part of the main chip region of the substrate. Align key patterns formed on surfaces of the first trenches and on surfaces of the substrate adjacent to the first trenches in the scribe lane region and having an alternately and repeatedly stacked structure of a silicon germanium pattern and a silicon pattern, are provided. A multi-bridge channel transistor is formed on the main chip region of the substrate.
