17668452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyunchul Lee of Hwaseong-si (KR)
Ki-Jeong Kim of Seongnam-si (KR)
Hyun-Sil Hong of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17668452 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with trenches defining an active pattern, a device isolation layer filling the trenches, and a word line intersecting the active pattern. The device isolation layer consists of a first isolation pattern covering a portion of a second trench, a second isolation pattern on top of the first pattern and covering the remaining portion of the second trench, and a filling pattern filling a first trench under the word line. The top surface of the second isolation pattern is at a higher level than the top surface of the filling pattern.
- The semiconductor device has trenches with different widths, allowing for a more versatile active pattern.
- The device isolation layer fills the trenches, providing electrical isolation between different components on the substrate.
- The word line intersects the active pattern, enabling communication and control of the device.
- The first and second isolation patterns cover different portions of the second trench, ensuring proper isolation.
- The filling pattern fills the first trench under the word line, optimizing space utilization.
- The higher top surface of the second isolation pattern provides additional isolation and protection.
Potential Applications
- Integrated circuits
- Microprocessors
- Memory devices
- Power electronics
Problems Solved
- Efficient electrical isolation between components on a semiconductor substrate
- Optimization of space utilization in a semiconductor device
- Enhanced protection and isolation of different components
Benefits
- Improved performance and functionality of integrated circuits
- Higher density of components on a semiconductor substrate
- Enhanced reliability and protection of sensitive components
Original Abstract Submitted
A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.
