17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
Jump to navigation
Jump to search
2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION
Organization Name
Inventor(s)
2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17818933 titled '2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION
Simplified Explanation
The patent application describes a complementary field effect transistor (CFET) made from stacked 2D-material transistors, specifically transition metal dichalcogenide (TMD) semiconductors.
- Stacked TMD transistors provide enhanced drive current.
- Stacked TMD transistors offer lower switching capacitance.
- CFET formed from stacked TMD transistors is desirable for its improved performance.
Potential Applications
- High-performance electronic devices
- Low-power consumption applications
- Integrated circuits
Problems Solved
- Limited drive current in traditional transistors
- High switching capacitance in conventional transistors
Benefits
- Enhanced drive current
- Lower switching capacitance
- Improved overall performance of electronic devices
Original Abstract Submitted
Disclosed is a complementary field effect transistor (CFET) formed from stacked 2D-material transistors. The 2D-material transistors are formed from transition metal dichalcogenide (TMD), which are atomically thin semiconductors. The stacked TMD transistors allow for enhanced drive current and lower switching capacitance, both of which are desirable.
