17824129. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824129 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a method for forming a semiconductor device structure by depositing a dielectric layer using an atomic layer deposition process. The method involves flowing a silicon source precursor, a carbon and nitrogen source precursor, and an oxygen source precursor into a process chamber at specific flow rates. The resulting as deposited layer has a higher carbon concentration than nitrogen concentration. The method also includes annealing the as deposited layer in an environment containing HO to form the dielectric layer.
- The method involves forming a dielectric layer using atomic layer deposition.
- The as deposited layer has a higher carbon concentration than nitrogen concentration.
- The flow rates of the silicon source precursor, carbon and nitrogen source precursor, and oxygen source precursor are carefully controlled.
- The as deposited layer is annealed in an environment containing HO to form the dielectric layer.
Potential Applications
- This technology can be used in the manufacturing of semiconductor devices.
- It can be applied in the production of integrated circuits and other electronic components.
Problems Solved
- The method provides a way to form a dielectric layer with specific carbon and nitrogen concentrations.
- It addresses the challenge of controlling the flow rates of different precursors during the atomic layer deposition process.
Benefits
- The method allows for precise control over the carbon and nitrogen concentrations in the dielectric layer.
- It provides a reliable and efficient way to manufacture semiconductor devices.
- The resulting dielectric layer can enhance the performance and reliability of electronic components.
Original Abstract Submitted
A semiconductor device structure and methods of forming the same are described. In some embodiments, the method includes forming a dielectric layer, which includes forming an as deposited layer using an atomic layer deposition process, which includes flowing a silicon source precursor into a process chamber at a first flow rate, flowing a carbon and nitrogen source precursor into the process chamber at a second flow rate, and flowing an oxygen source precursor into the process chamber at a third flow rate. A ratio of the first flow rate to the second flow rate to the third flow rate ranges between about one to one to eight and one to one to twelve, and the as deposited layer has a carbon concentration substantially greater than a nitrogen concentration. The method further includes annealing the as deposited layer in an environment including HO to form the dielectric layer.
