17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
You-Ru Lin of New Taipei City (TW)
Cheng-Hsien Wu of Hsinchu City (TW)
Chih-Hsin Ko of Fongshan City (TW)
Clement Hsingjen Wann of Carmel NY (US)
Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 17986119 titled 'Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure
Simplified Explanation
The present disclosure describes a FinFET device that includes a semiconductor substrate, a fin structure, a diamond-like shape structure, a gate structure, and a channel region.
- The FinFET device comprises a semiconductor substrate made of a first semiconductor material.
- A fin structure made of the same first semiconductor material is located on top of the semiconductor substrate.
- The fin structure has a top surface with a specific crystal plane orientation.
- A diamond-like shape structure made of a second semiconductor material is placed over the top surface of the fin structure.
- The diamond-like shape structure has at least one surface with a different crystal plane orientation.
- A gate structure is positioned over the diamond-like shape structure, separating a source region and a drain region.
- A channel region is defined within the diamond-like shape structure, connecting the source and drain regions.
Potential applications of this technology:
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
Problems solved by this technology:
- Improved performance and efficiency of FinFET devices
- Enhanced control of current flow in the channel region
- Reduction of leakage current
Benefits of this technology:
- Higher speed and lower power consumption in electronic devices
- Increased integration density on semiconductor chips
- Enhanced reliability and stability of FinFET devices
Original Abstract Submitted
The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.
