18321275. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Junyoung Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18321275 titled 'SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes multiple layers of two-dimensional materials, source and drain electrodes on either side of the first two-dimensional material layer, additional two-dimensional material layers connected to the first layer, a gate insulating layer surrounding the first layer, and a gate electrode on the gate insulating layer.
- The device includes at least one layer of two-dimensional material.
- Source and drain electrodes are positioned on both sides of the first two-dimensional material layer.
- Additional two-dimensional material layers are present on the sides of the source and drain electrodes and connected to the first layer.
- A gate insulating layer surrounds the first two-dimensional material layer.
- A gate electrode is located on top of the gate insulating layer.
Potential applications of this technology:
- This semiconductor device can be used in electronic devices such as transistors, integrated circuits, and sensors.
- It can be utilized in the development of high-performance and low-power electronic devices.
- The device's unique structure and use of two-dimensional materials can enable advancements in nanoelectronics and optoelectronics.
Problems solved by this technology:
- The device addresses the need for improved performance and power efficiency in electronic devices.
- It provides a solution for the integration of two-dimensional materials into semiconductor devices.
- The device offers enhanced control and functionality in electronic circuits.
Benefits of this technology:
- The use of two-dimensional materials allows for the fabrication of smaller and more efficient electronic devices.
- The device offers improved electrical properties, such as higher carrier mobility and lower power consumption.
- It enables the development of flexible and transparent electronics due to the properties of two-dimensional materials.
Original Abstract Submitted
A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.
