18370543. VERTICAL MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
VERTICAL MEMORY DEVICES
Organization Name
Inventor(s)
Kohji Kanamori of Suwon-si (KR)
Shinhwan Kang of Suwon-si (KR)
VERTICAL MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370543 titled 'VERTICAL MEMORY DEVICES
Simplified Explanation
The abstract describes a vertical memory device with gate electrodes arranged in a stacked staircase pattern on a substrate. The device includes a channel that extends through the gate electrodes in a first direction. A first contact plug is used to contact the upper surface of the first gate electrode and extends through a portion of the second gate electrode. A first spacer is placed between the first contact plug and the sidewalls of the first and second gate electrodes, insulating the contact plug from the second gate electrode. A first burying pattern is used to contact the bottom surfaces of the first contact plug and the first spacer, and it is made of an insulating material.
- Gate electrodes are arranged in a stacked staircase pattern on a substrate.
- A channel extends through the gate electrodes in a first direction.
- A first contact plug is used to contact the upper surface of the first gate electrode and extends through a portion of the second gate electrode.
- A first spacer is placed between the first contact plug and the sidewalls of the first and second gate electrodes, insulating the contact plug from the second gate electrode.
- A first burying pattern is used to contact the bottom surfaces of the first contact plug and the first spacer, and it is made of an insulating material.
Potential applications of this technology:
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Data storage in cloud computing and data centers.
- High-performance computing applications.
Problems solved by this technology:
- Improved memory density and storage capacity.
- Enhanced performance and speed of memory devices.
- Reduction in power consumption.
Benefits of this technology:
- Increased memory density allows for more data storage in a smaller footprint.
- Improved performance and speed enable faster data access and processing.
- Lower power consumption leads to energy efficiency and longer battery life in portable devices.
Original Abstract Submitted
A vertical memory device including gate electrodes on a substrate, the gate electrodes being spaced apart in a first direction and stacked in a staircase arrangement; a channel extending through the gate electrodes in the first direction; a first contact plug extending through a pad of a first gate electrode to contact an upper surface of the first gate electrode, the first contact plug extending through a portion of a second gate electrode, and the second gate electrode being adjacent to the first gate electrode; a first spacer between the first contact plug and sidewalls of the first gate electrode and the second gate electrode facing the first contact plug, the first spacer electrically insulating the first contact plug from the second gate electrode; and a first burying pattern contacting bottom surfaces of the first contact plug and the first spacer, the first burying pattern including an insulating material.
