17461714. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Yen Lin of Tainan City (TW)

Po-Cheng Tsai of Taichung City (TW)

Yu-Wei Zhang of Hualien County (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461714 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device using a 2-D material semiconductor layer. The method involves several steps, including forming source/drain electrodes, forming gate dielectric layers, and forming a gate electrode.

• The method begins by forming a 2-D material semiconductor layer over a substrate.
• Source/drain electrodes are then formed, covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the layer exposed.
• A first gate dielectric layer is formed over the exposed portion of the 2-D material semiconductor layer using a physical deposition process.
• A second gate dielectric layer is then formed over the first gate dielectric layer using a chemical deposition process. The second gate dielectric layer is thicker than the first gate dielectric layer.
• Finally, a gate electrode is formed over the second gate dielectric layer.

Potential applications of this technology:

• Semiconductor devices: The method can be used to fabricate various types of semiconductor devices, such as transistors, integrated circuits, and sensors.

Problems solved by this technology:

• Improved performance: The use of a 2-D material semiconductor layer and the specific fabrication method described in the patent application can lead to improved performance of semiconductor devices, such as higher speed and lower power consumption.

Benefits of this technology:

• Enhanced gate dielectric properties: The use of two different gate dielectric layers with different thicknesses can improve the overall performance and reliability of the semiconductor device.
• Simplified fabrication process: The method described in the patent application provides a simplified and efficient way to fabricate semiconductor devices using 2-D material semiconductor layers.

Original Abstract Submitted

A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.