17874738. METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS
Organization Name
Inventor(s)
Junghwan Um of Seongnam-si (KR)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17874738 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS
Simplified Explanation
The abstract describes a method of manufacturing an integrated circuit (IC) device. Here is a simplified explanation of the abstract:
- The method involves forming an etching target structure on a substrate.
- An etching mask pattern is then formed on the etching target structure, which has an opening.
- A portion of the etching target structure is etched through the opening to create a first hole.
- A conductive polymer layer is applied to cover the etching target structure inside the first hole.
- Another portion of the etching target structure is etched through the first hole, while the conductive polymer layer protects the structure, to create a second hole that extends from the first hole towards the substrate.
Potential applications of this technology:
- Manufacturing integrated circuit devices.
- Fabricating complex circuitry with precise hole formations.
Problems solved by this technology:
- Provides a method for creating holes in an etching target structure with improved precision and control.
- Protects the etching target structure during the etching process, preventing damage or unintended modifications.
Benefits of this technology:
- Enables the manufacturing of integrated circuit devices with intricate and precise hole formations.
- Enhances the reliability and performance of the integrated circuit devices.
- Reduces the risk of damage or unintended modifications during the manufacturing process.
Original Abstract Submitted
A method of manufacturing an integrated circuit (IC) device including forming an etching target structure on a substrate, forming an etching mask pattern having an opening on the etching target structure, etching a portion of the etching target structure through the opening to form a first hole in the etching target structure, forming a conductive polymer layer to cover the etching target structure inside the first hole, and etching another portion of the etching target structure through the first hole, in a state in which the etching target structure is covered by the conductive polymer layer inside the first hole, to form a second hole in the etching target structure and extending from the first hole toward the substrate may be provided.