18477068. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRANSISTOR

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Marcus Johannes Henricus Van Dal of Linden (BE)

Gerben Doornbos of Kessel-Lo (BE)

Georgios Vellianitis of Heverlee (BE)

Mauricio Manfrini of Zhubei City (TW)

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18477068 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRANSISTOR

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor structure. Here is a simplified explanation of the abstract:

• The method involves several steps in manufacturing a semiconductor structure.
• First, a bottom electrode layer is formed over a substrate.
• Then, a gate dielectric layer is formed over the bottom electrode layer.
• Next, an active layer is formed over the gate dielectric layer.
• Additionally, an indium-containing feature is formed vertically overlapping the bottom electrode layer.
• Finally, a source/drain contact landing is formed on the indium-containing feature.

Potential Applications:

• This technology can be applied in the manufacturing of various semiconductor devices, such as transistors and integrated circuits.
• It can be used in the production of electronic devices, including smartphones, computers, and other consumer electronics.

Problems Solved:

• The method provides a solution for manufacturing semiconductor structures with improved performance and functionality.
• It addresses the need for efficient formation of various layers and features in semiconductor devices.
• The vertical overlapping of the indium-containing feature with the bottom electrode layer enhances device performance.

Benefits:

• The method allows for the precise formation of different layers in a semiconductor structure, leading to improved device performance.
• The inclusion of the indium-containing feature enhances the functionality and efficiency of the semiconductor structure.
• The technology enables the production of advanced semiconductor devices with higher performance and reliability.

Original Abstract Submitted

Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a bottom electrode layer over a substrate and forming a gate dielectric layer over the bottom electrode layer. The method for manufacturing the semiconductor structure also includes forming an active layer over the gate dielectric layer and forming an indium-containing feature vertically overlapping the bottom electrode layer. The method for manufacturing the semiconductor structure also includes forming a source/drain contact landing on the indium-containing feature.