17847625. SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)

SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

Organization Name

Intel Corporation

Inventor(s)

Ilya V. Karpov of Portland OR (US)

Aaron A. Budrevich of Portland OR (US)

Gilbert Dewey of Beaverton OR (US)

Matthew V. Metz of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Dan S. Lavric of Portland OR (US)

SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17847625 titled 'SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

Simplified Explanation

The abstract describes an integrated circuit structure that includes a source or drain region, a contact, and a region with metals and semiconductor materials. The structure also includes two different dopants, one within the source or drain region and the other within the region between the source or drain region and the contact.

• The integrated circuit structure includes a source or drain region, a contact, and a region with metals and semiconductor materials.
• The source or drain region contains a first dopant, while the region between the source or drain region and the contact contains a second dopant.
• In one example, the first and second dopants are elementally different.
• In another example, the first and second dopants are elementally the same, but their concentrations are within 20% of each other.
• The section of the source or drain region that is closest to the region is at most 5 nanometers away.

Potential Applications:

• This integrated circuit structure can be used in various electronic devices, such as smartphones, computers, and IoT devices.
• It can improve the performance and efficiency of these devices by optimizing the dopant concentrations and distances within the structure.

Problems Solved:

• The integrated circuit structure addresses the challenge of optimizing dopant concentrations and distances to enhance the performance of electronic devices.
• It provides a solution for achieving better control over the electrical properties of the source or drain region and the region between the source or drain region and the contact.

Benefits:

• By using different dopants or controlling their concentrations, the integrated circuit structure can enhance the conductivity and overall performance of the device.
• The structure allows for precise control over the electrical properties, leading to improved efficiency and reliability.
• It offers flexibility in designing and optimizing integrated circuits for various applications.

Original Abstract Submitted

An integrated circuit structure includes a source or drain region, and a contact coupled to the source or drain region. A region including metals and semiconductor materials is between the source or drain region and the contact. A first dopant is within the source or drain region, and a second dopants is within the region. In one example, the first dopant is elementally different from the second dopant. In another example, the first dopant is elementally same as the second dopant, wherein a concentration of the first dopant within a section of the source or drain region is within 20% of a concentration of the second dopant within the region, and wherein the section of the source or drain region is at a distance of at most 5 nanometers (nm) from the region.