17956157. SELECTIVE OXIDATION OF A SUBSTRATE simplified abstract (Applied Materials, Inc.)
Contents
- 1 SELECTIVE OXIDATION OF A SUBSTRATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELECTIVE OXIDATION OF A SUBSTRATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SELECTIVE OXIDATION OF A SUBSTRATE
Organization Name
Inventor(s)
Hansel Lo of Santa Clara CA (US)
Chris Olsen of Santa Clara CA (US)
SELECTIVE OXIDATION OF A SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17956157 titled 'SELECTIVE OXIDATION OF A SUBSTRATE
Simplified Explanation
The method described in the patent application involves selectively oxidizing a substrate by forming a non-conformal layer on at least one side surface of a trench or hole, followed by selectively oxidizing the trench or hole to form an oxide layer that tapers.
- Formation of non-conformal layer on side surface of trench or hole
- Selective oxidation of the trench or hole to form an oxide layer that tapers
Potential Applications
This technology could be applied in semiconductor manufacturing processes, microelectronics, and nanotechnology for precise and controlled oxidation of substrates.
Problems Solved
This method solves the problem of achieving selective oxidation of specific areas on a substrate with controlled thickness and tapering of the oxide layer.
Benefits
- Precise and controlled oxidation of substrates - Tapered oxide layer formation - Improved performance and reliability of electronic devices
Potential Commercial Applications
"Selective Oxidation Method for Substrates in Semiconductor Manufacturing" could be a suitable title for this section. This technology could be commercialized in the semiconductor industry for advanced device fabrication processes, as well as in research and development for nanoscale applications.
Possible Prior Art
There may be prior art related to selective oxidation methods in semiconductor processing, such as techniques for forming oxide layers on substrates with controlled thickness and tapering. Further research and analysis would be needed to identify specific prior art examples.
Unanswered Questions
How does this method compare to existing selective oxidation techniques in terms of efficiency and precision?
This article does not provide a direct comparison with existing selective oxidation techniques, leaving the reader to wonder about the advantages and limitations of this new method.
What are the potential challenges or limitations of implementing this selective oxidation method in industrial-scale manufacturing processes?
The article does not address the practical aspects of implementing this technology in large-scale manufacturing, leaving a gap in understanding the real-world applicability of the method.
Original Abstract Submitted
Described herein is a method for selectively oxidizing a substrate. The method includes forming a non-conformal layer on at least one side surface of a trench or a hole of a substrate. After forming the non-conformal layer, the at least one trench or at least one hole may be selectively oxidized, wherein oxidation of the non-conformal layer and an exposed portion of the at least one side wall not covered by the non-conformal layer occurs to form an oxide layer. The oxide layer is thicker at a lower portion of the at least one side wall than the upper portion of the at least one side wall, such that it tapers.
