TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

The patent application describes technologies for a transistor with a thin-film ferroelectric gate dielectric, specifically using a thin layer of scandium aluminum nitride (ScAlN) as the ferroelectric gate dielectric. The transistor can have a channel made of materials such as gallium nitride or molybdenum disulfide. The ferroelectric polarization of the gate dielectric changes when voltage is applied and removed from the gate electrode, allowing for switching of the transistor at a lower applied voltage. Additionally, the ferroelectric polarization of the gate dielectric changes when the voltage surpasses a positive or negative threshold value, making the transistor suitable for use as a one-transistor memory cell.

Thin-film ferroelectric gate dielectric technology
Scandium aluminum nitride (ScAlN) ferroelectric gate dielectric
Gallium nitride or molybdenum disulfide channel materials
Lower voltage switching capability
One-transistor memory cell application

Potential Applications

The technology can be applied in:

Low-power electronics
Memory devices
Logic circuits

Problems Solved

Reduced power consumption in electronic devices
Improved memory cell performance
Enhanced transistor switching efficiency

Benefits

Lower power consumption
Higher performance memory cells
Improved transistor efficiency

Potential Commercial Applications

Consumer electronics
Internet of Things (IoT) devices
Wearable technology

Possible Prior Art

There may be prior art related to thin-film ferroelectric gate dielectrics in transistors, but specific examples are not provided in the abstract.

Unanswered Questions

What are the specific fabrication processes involved in creating transistors with thin-film ferroelectric gate dielectrics?

The patent abstract does not detail the specific steps or techniques used in fabricating transistors with thin-film ferroelectric gate dielectrics. Further information on the fabrication processes would be beneficial for understanding the practical implementation of this technology.

Are there any limitations or challenges associated with using thin-film ferroelectric gate dielectrics in transistors?

The abstract does not mention any potential limitations or challenges that may arise from using thin-film ferroelectric gate dielectrics in transistors. Exploring any drawbacks or obstacles in implementing this technology could provide a more comprehensive understanding of its practical implications.

Original Abstract Submitted

Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScAlN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.

17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)

Contents

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

Organization Name

Inventor(s)