18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Volume-less Fluorine Incorporation Method
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsueh-Ju Chen of Taipei City (TW)
Chia-Wei Hsu of Taipei City (TW)
Volume-less Fluorine Incorporation Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18150861 titled 'Volume-less Fluorine Incorporation Method
Simplified Explanation
The method described in the patent application involves a process for treating gate dielectric layers in semiconductor devices.
- Removing a dummy gate stack to create a trench between gate spacers
- Depositing a gate dielectric material into the trench
- Performing a first treatment process using a fluorine-containing gas on the gate dielectric
- Performing a first drive-in process to drive fluorine into the gate dielectric
- Performing a second treatment process using the fluorine-containing gas on the gate dielectric
- Performing a second drive-in process to further drive fluorine into the gate dielectric
- Forming conductive layers to fill the trench after the second drive-in process
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- Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Problems Solved
- Improving gate dielectric properties
- Enhancing device performance
- Increasing device reliability
- Benefits
- Enhanced gate dielectric quality
- Improved device functionality
- Increased device longevity
Original Abstract Submitted
A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.
