18493856. SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Han-Jong Chia of Hsinchu City (TW)

SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18493856 titled 'SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE

Simplified Explanation

The patent application is directed towards an integrated chip with a switching layer over a semiconductor substrate, comprising a first metal oxide and an upper conductive structure overlying the switching layer.

• The switching layer is positioned between opposing sidewalls of the upper conductive structure.
• A first dielectric layer, made of a second metal oxide different from the first metal oxide, is placed along the opposing sidewalls of the switching layer.
• The top surface of the switching layer and the top surface of the first dielectric layer directly underlie the bottom surface of the upper conductive structure.

• • Potential Applications:**

• Integrated circuits
• Memory devices
• Logic devices

• • Problems Solved:**

• Improved performance and efficiency of integrated chips
• Enhanced reliability and durability of semiconductor devices

• • Benefits:**

• Higher speed and lower power consumption
• Increased data storage capacity
• Extended lifespan of semiconductor devices

Original Abstract Submitted

Various embodiments of the present disclosure are directed towards an integrated chip including a switching layer over a semiconductor substrate. The switching layer comprises a first metal oxide. An upper conductive structure overlies the switching layer. The switching layer is spaced between opposing sidewalls of the upper conductive structure. A first dielectric layer is disposed along opposing sidewalls of the switching layer. The first dielectric layer comprises a second metal oxide different from the first metal oxide. A top surface of the switching layer and a top surface of the first dielectric layer directly underlie a bottom surface of the upper conductive structure.