18152715. TRIMMING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
TRIMMING METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chun-Hung Liao of Taichung (TW)
Huang-Lin Chao of Hillsboro OR (US)
TRIMMING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152715 titled 'TRIMMING METHOD
Simplified Explanation
The trimming method described in the patent application involves bonding a first wafer with a substrate and a device layer to a second wafer, performing an edge trimming process to remove a portion of the substrate, and then thinning the untrimmed portion of the substrate through a grinding process. This results in the substrate having a flange pattern protruding from the device layer and surrounding the untrimmed portion of the substrate.
- Bonding of first wafer with substrate and device layer to second wafer
- Edge trimming process to remove portion of substrate
- Thinning of untrimmed portion of substrate through grinding process
- Substrate has flange pattern protruding from device layer
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the fabrication of integrated circuits and microelectromechanical systems (MEMS). It could also be used in the production of sensors, actuators, and other microscale devices.
Problems Solved
This technology solves the problem of efficiently trimming and thinning substrates in the manufacturing process of semiconductor devices. It allows for precise control over the thickness of the substrate and the removal of excess material without damaging the device layer.
Benefits
The benefits of this technology include improved device performance, increased yield in manufacturing processes, and reduced material waste. It also enables the production of thinner and more lightweight devices with enhanced functionality.
Potential Commercial Applications
One potential commercial application of this technology is in the production of advanced semiconductor devices for consumer electronics, automotive systems, and medical devices. It could also be used in the development of high-performance sensors for industrial applications.
Possible Prior Art
One possible prior art for this technology could be the use of laser cutting or chemical etching processes to trim and thin substrates in semiconductor manufacturing. Another could be the use of mechanical grinding techniques to achieve similar results in device fabrication processes.
Unanswered Questions
How does this technology compare to existing methods of substrate trimming and thinning in terms of efficiency and precision?
The article does not provide a direct comparison between this technology and existing methods of substrate trimming and thinning. It would be interesting to know how this method stacks up against traditional techniques in terms of efficiency, precision, and cost-effectiveness.
What are the potential limitations or challenges in implementing this technology on an industrial scale?
The article does not address any potential limitations or challenges in implementing this technology on an industrial scale. It would be important to consider factors such as scalability, equipment requirements, and process integration when applying this method in large-scale manufacturing operations.
Original Abstract Submitted
A trimming method is provided. The trimming method includes the following steps. A first wafer including a substrate and a device layer over a first side of the substrate is provided. The first wafer is bonded to a second wafer with the first side of the substrate facing toward the second wafer. An edge trimming process is performed to remove a trimmed portion of the substrate from a second side opposite to the first side vertically downward toward the first side in a first direction along a perimeter of the substrate, wherein the edge trimming process results in the substrate having a flange pattern laterally protruding from the device layer and laterally surrounding an untrimmed portion of the substrate along a second direction perpendicular to the first direction. A grinding process is performed on the untrimmed portion of the substrate from the second side to thin the untrimmed portion of the substrate to a reduced thickness in the first direction, wherein the grinding process results in the reduced thickness being greater than a thickness of the flange pattern.
