17697019. METHOD OF FORMING A PATTERN simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD OF FORMING A PATTERN
Organization Name
Inventor(s)
Yongchul Jeong of Suwon-si (KR)
Yigwon Kim of Seongnam-si (KR)
Taemin Choi of Hwaseong-si (KR)
METHOD OF FORMING A PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 17697019 titled 'METHOD OF FORMING A PATTERN
Simplified Explanation
A method is described for forming a pattern on a substrate using a photoresist layer and an etching object layer. The process involves the following steps:
- A layer of etching object material is deposited on the substrate.
- A photoresist layer is applied on top of the etching object layer, consisting of a metal, oxygen, and an organic material.
- The photoresist layer is exposed to a specific pattern using a process called exposure.
- A developing process is performed on the photoresist layer, resulting in the formation of a patterned photoresist layer containing a metal oxide.
- Ozone is introduced onto the substrate to remove any remaining residue of the photoresist layer, specifically the organic material.
- The etching object layer is then etched using the patterned photoresist layer as a mask.
Potential applications of this technology:
- Semiconductor manufacturing: This method can be used to create intricate patterns on semiconductor substrates, which are essential for the production of microchips and other electronic devices.
- Nanofabrication: The ability to form precise patterns on a substrate is crucial for the development of nanoscale devices and structures.
- Optical devices: This method can be employed to create patterns on optical components, such as lenses and waveguides, enabling the production of advanced optical devices.
Problems solved by this technology:
- Precise pattern formation: The method allows for the creation of highly accurate patterns on a substrate, ensuring the desired functionality of the final product.
- Residue removal: The introduction of ozone effectively removes any remaining organic material from the photoresist layer, preventing contamination and ensuring a clean etching process.
- Etching object protection: The patterned photoresist layer acts as a protective mask during the etching process, preventing damage to the underlying etching object layer.
Benefits of this technology:
- Enhanced manufacturing efficiency: The method offers a streamlined process for pattern formation, reducing the number of steps required and improving overall manufacturing efficiency.
- High pattern accuracy: The use of photoresist layers and precise exposure techniques allows for the creation of intricate and accurate patterns on a substrate.
- Improved product quality: The ability to remove organic residue and protect the etching object layer ensures the production of high-quality products with minimal defects.
Original Abstract Submitted
A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material, The etching object layer is etched using the photoresist pattern as an etching mask.
