17887122. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chung-Liang Cheng of Hsinchu (TW)
Huang-Lin Chao of Hsinchu (TW)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887122 titled 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor device by depositing metal sputtered from a metal target on a semiconductor structure with a recess, and then oxidizing the metal to turn it into dielectric material.
- Metal sputtered from a metal target is deposited on a semiconductor structure with a recess.
- The metal fills the recess in the semiconductor structure.
- The metal on the semiconductor structure is oxidized to convert it into dielectric material.
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, memory devices, and sensors.
Problems Solved
1. Filling recesses in semiconductor structures efficiently. 2. Improving dielectric properties of the semiconductor device.
Benefits
1. Enhanced performance and reliability of semiconductor devices. 2. Cost-effective manufacturing process. 3. Improved integration of metal and dielectric materials in semiconductor structures.
Original Abstract Submitted
A method for manufacturing a semiconductor device includes: depositing metal sputtered from a metal target on a semiconductor structure having a recess, so as to fill the recess; and oxidizing the metal on the semiconductor structure to turn the metal into dielectric.
