18158641. Semiconductor Device and Method of Manufacture simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Semiconductor Device and Method of Manufacture
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Chunyao Wang of Zhubei City (TW)
Yong-Yan Lu of Hsinchu City (TW)
Ming-Han Chung of Hsinchu City (TW)
Semiconductor Device and Method of Manufacture - A simplified explanation of the abstract
This abstract first appeared for US patent application 18158641 titled 'Semiconductor Device and Method of Manufacture
Simplified Explanation
Abstract
Semiconductor devices and methods of manufacturing are presented in which a first spacer layer and a second spacer layer are formed. In embodiments, the first spacer layer and the second spacer layer are formed with an enhanced etch resistance. Such an enhanced etch resistance works to help prevent undesired breakthroughs during subsequent manufacturing processes.
Explanation
- The patent application describes a new method for manufacturing semiconductor devices.
- The method involves forming a first spacer layer and a second spacer layer.
- Both spacer layers are designed to have enhanced etch resistance.
- The enhanced etch resistance helps to prevent undesired breakthroughs during subsequent manufacturing processes.
Potential Applications
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit manufacturing
Problems Solved
- Undesired breakthroughs during semiconductor manufacturing processes
- Etching issues in semiconductor device fabrication
Benefits
- Improved manufacturing process for semiconductor devices
- Enhanced etch resistance prevents undesired breakthroughs
- Higher quality and reliability of semiconductor devices
Original Abstract Submitted
Semiconductor devices and methods of manufacturing are presented in which a first spacer layer and a second spacer layer are formed. In embodiments the first spacer layer and the second spacer layer are formed with an enhanced etch resistance. Such an enhanced etch resistance works to help prevent undesired breakthroughs during subsequent manufacturing processes.
