18153633. SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Junyoung Kwon of Suwon-si (KR)
Keunwook Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18153633 titled 'SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with a gate electrode, a trench penetrating the gate electrode, a gate insulating layer in the trench and on the substrate, a channel layer on the gate insulating layer made of a two-dimensional semiconductor material, and spaced apart source and drain electrodes on the channel layer.
- The device includes a gate electrode embedded in a substrate.
- A trench is formed in the substrate, penetrating the gate electrode.
- A gate insulating layer is deposited in the trench and on the substrate.
- A channel layer made of a two-dimensional semiconductor material is formed on the gate insulating layer.
- Source and drain electrodes are positioned on the channel layer, spaced apart from each other.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as transistors, integrated circuits, and microprocessors.
- It can be used in high-performance computing systems, mobile devices, and communication devices.
Problems solved by this technology:
- The device provides improved performance and efficiency compared to traditional semiconductor devices.
- It allows for better control of the flow of electrical current, leading to faster and more reliable operation.
Benefits of this technology:
- The use of a two-dimensional semiconductor material in the channel layer enhances the device's performance.
- The device offers improved power efficiency and reduced power consumption.
- It enables faster data processing and higher data transfer rates.
- The device can be manufactured using existing semiconductor fabrication techniques.
Original Abstract Submitted
A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substrate, a gate insulating layer in the trench and an upper surface of the substrate, a channel layer on the gate insulating layer and including a two-dimensional (2D) semiconductor material, and a source electrode and a drain electrode, which are spaced apart from each other on the channel layer.
