18231339. YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Hyunwoo Kim of Suwon-si (KR)

Kazuki Harano of Tokyo (JP)

Kiyoshi Murata of Tokyo (JP)

Haruyoshi Sato of Tokyo (JP)

Seungmin Ryu of Suwon-si (KR)

Gyuhee Park of Suwon-si (KR)

Younjoung Cho of Suwon-si (KR)

Atsushi Yamashita of Tokyo (KR)

YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231339 titled 'YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

Simplified Explanation

The abstract describes a yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film.

  • Yttrium compound represented by General formula (1) is disclosed.
  • Method for manufacturing an integrated circuit device is provided.
  • Raw material for forming an yttrium-containing film is described.

Potential Applications

  • Semiconductor industry for manufacturing integrated circuit devices.
  • Electronics industry for forming yttrium-containing films in various electronic components.

Problems Solved

  • Providing a novel yttrium compound for use in manufacturing processes.
  • Offering a method for forming yttrium-containing films in electronic devices.

Benefits

  • Improved performance and efficiency of integrated circuit devices.
  • Enhanced properties of electronic components with yttrium-containing films.


Original Abstract Submitted

An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):