18201251. METHOD OF FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
METHOD OF FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
METHOD OF FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18201251 titled 'METHOD OF FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The abstract describes a method for forming a thin film on a substrate using microwave irradiation. The method involves selectively adsorbing a precursor onto a partial region of the substrate's surface, followed by region-selective annealing using microwaves. A reactant is then supplied to react with the adsorbed precursor and form a thin film unit layer. The microwave irradiation induces vibrations in the precursor, locally heating the adsorbed region of the substrate's surface.
- The method involves supplying a precursor to a substrate and selectively adsorbing it to a partial region of the substrate's surface.
- Microwaves are then irradiated onto the substrate to perform region-selective annealing.
- A reactant is supplied to react with the adsorbed precursor and form a thin film unit layer.
- The microwave irradiation induces vibrations in the precursor, locally heating the adsorbed region of the substrate's surface.
Potential Applications:
- Thin film deposition for various industries such as electronics, optics, and solar cells.
- Creation of patterned thin films for microelectronics and microdevices.
- Surface modification and functionalization of substrates.
Problems Solved:
- Provides a method for selective adsorption of a precursor onto a substrate, allowing controlled deposition of thin films.
- Enables region-selective annealing, reducing the need for high-temperature processes.
- Offers a localized heating method for precise control over thin film formation.
Benefits:
- Allows for precise control over the deposition of thin films, enabling tailored material properties.
- Reduces the energy and time required for thin film formation compared to conventional methods.
- Enables the creation of complex patterns and structures on a substrate surface.
Original Abstract Submitted
A method of forming a thin film is provided, the method including: an operation of supplying a precursor to a substrate, to selectively adsorb the precursor to a partial region of a surface of the substrate; an operation of performing a region-selective annealing by irradiating microwaves onto the substrate; and an operation of supplying a reactant to react with the precursor adsorbed on the substrate to form a thin film unit layer, wherein the microwave irradiated onto the substrate induces vibrations in at least a portion of the precursor so that the partial region of the surface of the substrate on which the precursor is adsorbed is locally heated.
