18175176. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Seungmin Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18175176 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with an active pattern. There are two channel patterns on the active pattern, spaced apart from each other in a first direction. Each channel pattern consists of vertically stacked semiconductor patterns. Between the pair of channel patterns, there is a source/drain pattern. On top of the channel patterns, there are a pair of gate electrodes. An active contact is present between the gate electrodes, and outer spacers are on the side surfaces of the gate electrodes. The distance between the outer spacers, with the active contact in between, is smaller than the width of the source/drain pattern in the first direction at a specific level where the uppermost semiconductor pattern is positioned.
- The semiconductor device includes a substrate with an active pattern.
- Two channel patterns are present on the active pattern, spaced apart from each other in a first direction.
- Each channel pattern consists of vertically stacked semiconductor patterns.
- A source/drain pattern is located between the pair of channel patterns.
- A pair of gate electrodes is positioned on top of the channel patterns.
- An active contact is present between the gate electrodes.
- Outer spacers are on the side surfaces of the gate electrodes.
- The distance between the outer spacers, with the active contact in between, is smaller than the width of the source/drain pattern in the first direction at a specific level where the uppermost semiconductor pattern is positioned.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits for improved performance and efficiency.
Problems Solved
- The device solves the problem of reducing the width of the source/drain pattern while maintaining proper spacing between the outer spacers.
- It addresses the challenge of optimizing the design and layout of semiconductor patterns for enhanced functionality.
Benefits
- The device allows for compact and efficient integration of semiconductor components.
- It enables improved performance and functionality of electronic devices.
- The design provides better control and management of electrical currents within the device.
Original Abstract Submitted
A semiconductor device includes a substrate including an active pattern, a pair of channel patterns spaced apart from each other in a first direction on the active pattern, each of the pair of channel patterns including vertically stacked semiconductor patterns, a source/drain pattern between the pair of channel patterns, a pair of gate electrodes on the channel patterns, an active contact between the pair of gate electrodes, and outer spacers on side surfaces of the pair of gate electrodes. A distance between the outer spacers spaced apart from each other with the active contact therebetween is smaller than a width of the source/drain pattern in the first direction at a first level at which an upper surface of an uppermost semiconductor pattern among the semiconductor patterns is positioned.
