18176692. METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyoungwoo Hong of Suwon-si (KR)
Yeongyeop Song of Suwon-si (KR)
METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18176692 titled 'METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for depositing a metal-containing film on a wafer surface using a series of deposition cycles. Each cycle involves adsorbing a hydrogen-containing compound on the wafer surface, treating the wafer with hydrogen gas, and introducing a metal precursor to react with the hydrogen-containing compound to form the metal-containing film.
- The method involves depositing a metal-containing film on a wafer surface.
- The deposition process consists of multiple cycles.
- Each cycle includes adsorbing a hydrogen-containing compound on the wafer surface.
- The wafer is then treated with hydrogen gas.
- A metal precursor is provided to react with the hydrogen-containing compound and form the metal-containing film.
Potential applications of this technology:
- Semiconductor manufacturing
- Thin film deposition for electronic devices
- Solar cell production
Problems solved by this technology:
- Provides a method for depositing a metal-containing film with atomic layer precision.
- Allows for controlled and uniform deposition of thin films.
- Reduces the risk of impurities or defects in the film.
Benefits of this technology:
- Enables precise control over the thickness and composition of the metal-containing film.
- Provides a reliable and repeatable deposition process.
- Allows for the production of high-quality films with improved performance.
Original Abstract Submitted
A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.
