18446583. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Mariko Sumiya of Yokkaichi Mie (JP)
Ryosuke Yamamoto of Nagoya Aichi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446583 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the abstract involves manufacturing a semiconductor device by forming a release layer with specific characteristics, subjecting it to anodic chemical conversion, forming device layers, and bonding them together.
- The release layer includes a first polycrystalline semiconductor layer on a first substrate, a second polycrystalline semiconductor layer with different impurity concentrations, and an n-type impurity concentration higher than the first layer.
- The first polycrystalline semiconductor layer is subjected to anodic chemical conversion to create a first porous layer.
- A first device layer is formed on the first porous layer.
- The first device layer is then bonded to a second device layer on a second substrate.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as sensors, microprocessors, and memory chips.
Problems Solved
This method allows for the creation of semiconductor devices with improved performance and reliability by utilizing specific impurity concentrations and bonding techniques.
Benefits
The benefits of this technology include enhanced semiconductor device performance, increased efficiency in manufacturing processes, and potentially lower production costs.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and research institutions.
Possible Prior Art
One possible prior art could be the use of anodic chemical conversion in semiconductor manufacturing processes to create porous layers for device integration.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This method offers unique advantages in terms of impurity concentrations and bonding techniques that may result in improved device performance, but further comparative studies are needed to fully understand its benefits.
What are the specific characteristics of the first and second polycrystalline semiconductor layers that make them suitable for this method?
The abstract mentions different impurity concentrations in the first and second layers, but more detailed information on their specific properties and how they contribute to the overall process would be beneficial for a deeper understanding of the technology.
Original Abstract Submitted
A method for manufacturing a semiconductor device includes: forming a release layer including a first polycrystalline semiconductor layer provided on a first substrate, and a second polycrystalline semiconductor layer provided between the first substrate and the first polycrystalline semiconductor layer and having a p-type impurity concentration which is lower than that of the first polycrystalline semiconductor layer, and an n-type impurity concentration which is higher than that of the first polycrystalline semiconductor layer; subjecting the first polycrystalline semiconductor layer to anodic chemical conversion to form a first porous layer; forming a first device layer on the first porous layer; and bonding together the first device layer and a second device layer provided on a second substrate.
