18158305. SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURE METHOD FOR SEMICONDUCTOR STRUCTURE simplified abstract (Huawei Technologies Co., Ltd.)

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SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURE METHOD FOR SEMICONDUCTOR STRUCTURE

Organization Name

Huawei Technologies Co., Ltd.

Inventor(s)

Ran He of Yokohama (JP)

Huifang Jiao of Shenzhen (CN)

SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURE METHOD FOR SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158305 titled 'SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURE METHOD FOR SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a semiconductor structure for heat dissipation in electronic devices. The structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The substrate has a base plate with a groove, and a diamond is placed in the groove. The conducting via passes through the substrate, bonding layer, and part of the semiconductor device, and is connected to the metal layer. The groove avoids the conducting via.

  • The semiconductor structure includes a diamond in the substrate groove, which helps in heat dissipation.
  • The conducting via provides electrical connection between the semiconductor device and the metal layer.
  • The groove in the substrate allows for the bypass of the conducting via.

Potential Applications

This technology can be applied in various electronic devices that require efficient heat dissipation, such as:

  • High-performance computers and servers
  • Power electronics and inverters
  • LED lighting systems
  • Electric vehicles and hybrid vehicles

Problems Solved

The semiconductor structure addresses the following problems in electronic devices:

  • Heat dissipation: The diamond in the substrate groove improves heat dissipation, preventing overheating and potential damage to the semiconductor device.
  • Electrical connection: The conducting via ensures proper electrical connection between the semiconductor device and the metal layer, enhancing device performance and reliability.

Benefits

The use of this semiconductor structure offers several benefits:

  • Improved heat dissipation: The diamond in the substrate groove enhances the overall heat dissipation capability of the device, improving its performance and longevity.
  • Efficient electrical connection: The conducting via ensures reliable electrical connection, reducing the risk of signal loss or device failure.
  • Simplified manufacturing process: The structure simplifies the manufacturing process by providing a straightforward method for integrating the semiconductor device, substrate, and metal layer.


Original Abstract Submitted

Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.