17876036. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kai-Fang Cheng of Hsinchu (TW)

Hsiao-Kang Chang of Hsinchu (TW)

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17876036 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor structure. Here is a simplified explanation of the abstract:

• A dielectric layer is formed on a base structure.
• A trench is created in the dielectric layer to expose the base structure.
• A metal contact is formed in the trench.
• Multiple atomic layer deposition (ALD) cycles are performed to create a series of atomic layers that cover the dielectric layer and the metal contact. These atomic layers act as an etch stop layer.
• Each ALD cycle involves forming one atomic layer and treating it to convert it into a monocrystalline phase at a temperature below 425°C.

Potential applications of this technology:

• Manufacturing of semiconductor devices, such as integrated circuits and transistors.
• Fabrication of high-performance electronic components that require precise control over the etching process.

Problems solved by this technology:

• Provides an effective etch stop layer to protect the underlying structures during the manufacturing process.
• Enables the formation of monocrystalline atomic layers at relatively low temperatures, reducing the risk of damage to the semiconductor structure.

Benefits of this technology:

• Improved manufacturing efficiency and yield by preventing damage during etching.
• Enhanced performance and reliability of semiconductor devices due to the precise control over the etching process.
• Lower production costs by reducing the need for high-temperature processing.

Original Abstract Submitted

A method for manufacturing a semiconductor structure includes: forming a dielectric layer on a base structure; forming a trench in the dielectric layer to expose the base structure; forming a metal contact in the trench; and performing a plurality of first atomic layer deposition (ALD) cycles to form a plurality of first atomic layers which cover the dielectric layer and the metal contact and which serve as an etch stop layer. Each of the first ALD cycles includes: forming a corresponding one of the first atomic layers; and performing a treatment to convert the corresponding first atomic layer into monocrystalline phase at a temperature not greater than 425° C.