17960277. SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS
Organization Name
Inventor(s)
Taehyung Kim of Hwaseong-si (KR)
Kwanyoung Chun of Suwon-si (KR)
SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17960277 titled 'SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS
Simplified Explanation
The disclosed semiconductor device includes:
- An active region that protrudes upwardly from a substrate.
- A plurality of channel patterns that are spaced apart from each other in a first direction on the active region.
- A gate electrode that extends in the first direction on the active region and covers the plurality of channel patterns.
- Each of the plurality of channel patterns includes a plurality of semiconductor patterns that are spaced apart from each other in a direction perpendicular to the top surface of the active region.
- The gate electrode covers the top surface of the active region between the plurality of channel patterns.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
Problems solved by this technology:
- The device addresses the need for improved performance and efficiency in semiconductor devices.
- It solves the problem of reducing the size and increasing the density of components in electronic devices.
Benefits of this technology:
- The active region protruding from the substrate allows for better control and performance of the semiconductor device.
- The spacing and arrangement of the channel patterns provide enhanced functionality and efficiency.
- The gate electrode covering the top surface between the channel patterns improves the overall performance and reliability of the device.
Original Abstract Submitted
Disclosed is a semiconductor device comprising an active region that protrudes upwardly from a substrate, a plurality of channel patterns that are spaced apart from each other in a first direction on the active region, and a gate electrode that extends in the first direction on the active region and covers the plurality of channel patterns. Each of the plurality of channel patterns includes a plurality of semiconductor patterns that are spaced apart from each other in a direction perpendicular to a top surface of the active region. The gate electrode covers the top surface of the active region between the plurality of channel patterns.