17383444. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Gao-Ming Wu of Hsinchu (TW)

Katherine H. Chiang of New Taipei City (TW)

Chien-Hao Huang of Hsinchu (TW)

Chung-Te Lin of Tainan City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17383444 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor die that includes a transistor array with unit cells and spacers. The unit cells are arranged in rows and columns, and the spacers surround the unit cells. The unit cells have source and drain contacts separated by interlayer dielectric material. The spacers have thicker sections that contact the interlayer dielectric material and thinner sections that contact the source and drain contacts.

  • The semiconductor die includes a transistor array with unit cells and spacers.
  • The unit cells are arranged in rows and columns.
  • The spacers surround the unit cells.
  • The unit cells have source and drain contacts separated by interlayer dielectric material.
  • The spacers have thicker sections that contact the interlayer dielectric material and thinner sections that contact the source and drain contacts.

Potential Applications

  • This technology can be used in the manufacturing of semiconductor devices.
  • It can be applied in the production of integrated circuits and microchips.
  • The technology can be utilized in various electronic devices such as smartphones, computers, and tablets.

Problems Solved

  • The technology solves the problem of efficiently arranging and spacing unit cells in a transistor array.
  • It addresses the challenge of maintaining proper contact between the spacers and the interlayer dielectric material, as well as the source and drain contacts.

Benefits

  • The use of spacers helps to encircle and protect the unit cells in the transistor array.
  • The thicker sections of the spacers provide better contact with the interlayer dielectric material, ensuring proper functionality.
  • The thinner sections of the spacers allow for proper contact with the source and drain contacts, facilitating efficient electrical connections.


Original Abstract Submitted

A semiconductor die includes a semiconductor substrate and a transistor array disposed over the semiconductor substrate. The transistor array includes unit cells and spacers. The unit cells are disposed along rows of the transistor array extending in a first direction and columns of the transistor array extending in a second direction perpendicular to the first direction. The spacers encircle the unit cells. The unit cells include source contacts and drain contacts separated by interlayer dielectric material portions. First sections of the spacers contacting the interlayer dielectric material portions are thicker than second sections of the spacers contacting the source contacts and the drain contacts.

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