17836452. SELECTIVE ETCHING METHOD AND SEMICONDUCTOR STRUCTURE MANUFACTURED USING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SELECTIVE ETCHING METHOD AND SEMICONDUCTOR STRUCTURE MANUFACTURED USING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
SELECTIVE ETCHING METHOD AND SEMICONDUCTOR STRUCTURE MANUFACTURED USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17836452 titled 'SELECTIVE ETCHING METHOD AND SEMICONDUCTOR STRUCTURE MANUFACTURED USING THE SAME
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor structure. Here is a simplified explanation of the abstract:
- The method involves forming a semiconductor portion with an exposed region.
- Two fin sidewalls, made of a dielectric material, are formed on opposite sides of the exposed region.
- An etching process is performed to remove the exposed region and create a recess.
- During the etching process, a protection layer is formed to safeguard each fin sidewall.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Integrated circuit fabrication
- Electronic device production
Problems solved by this technology:
- Protecting the fin sidewalls during the etching process
- Ensuring precise and controlled etching of the exposed region
- Preventing damage to the semiconductor structure during manufacturing
Benefits of this technology:
- Improved manufacturing efficiency and accuracy
- Enhanced protection of delicate fin sidewalls
- Enables the creation of complex semiconductor structures with recessed regions
Original Abstract Submitted
A method for manufacturing a semiconductor structure includes forming a semiconductor portion which has an exposed region; forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric material; and performing an etching process such that the exposed region of the semiconductor portion is etched away to form a recess while a protection layer is formed to protect each of the fin sidewalls during the etching process. Other methods for manufacturing the semiconductor structure are also disclosed.
