18312383. CAPACITOR, AND DEVICE COMPRISING THE SAME, AND METHOD OF PREPARING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
CAPACITOR, AND DEVICE COMPRISING THE SAME, AND METHOD OF PREPARING THE SAME
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CAPACITOR, AND DEVICE COMPRISING THE SAME, AND METHOD OF PREPARING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18312383 titled 'CAPACITOR, AND DEVICE COMPRISING THE SAME, AND METHOD OF PREPARING THE SAME
Simplified Explanation
The abstract describes a capacitor design that includes thin-film electrode layers and a dielectric layer. The electrode layers and the dielectric layer are made of perovskite-type crystal structures. The dielectric layer is an epitaxial layer and contains a metal oxide with a specific arrangement of elements. One of the elements in the metal oxide acts as a dopant and has a lower valency than the other element.
- The capacitor design includes thin-film electrode layers and a dielectric layer.
- The electrode layers and the dielectric layer are made of perovskite-type crystal structures.
- The dielectric layer is an epitaxial layer.
- The dielectric layer contains a metal oxide with a specific arrangement of elements.
- One of the elements in the metal oxide acts as a dopant and has a lower valency than the other element.
Potential Applications
- Capacitors for electronic devices
- Energy storage systems
- Power electronics
Problems Solved
- Improved performance and efficiency of capacitors
- Enhanced dielectric properties
- Increased energy storage capacity
Benefits
- Higher capacitance values
- Lower energy losses
- Improved reliability and durability
- Compact and lightweight design
Original Abstract Submitted
A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.
