17850714. METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE
Organization Name
Inventor(s)
JUNYUN Kweon of CHEONAN-SI (KR)
JUMYONG Park of CHEONAN-SI (KR)
HYUNSU Hwang of SIHEUNG-SI (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17850714 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor package. Here is a simplified explanation of the abstract:
- The method starts by applying a mask layer on a wafer, which consists of a semiconductor substrate and an insulating layer.
- A groove is created in the semiconductor substrate using a laser grooving process.
- The opening of the mask layer is enlarged by performing a second laser grooving process.
- A portion of the insulating layer is exposed by removing part of the mask layer.
- Finally, the semiconductor substrate is cut, and the exposed portion of the insulating layer is removed through a dicing process.
Potential applications of this technology:
- Semiconductor packaging industry
- Electronics manufacturing
Problems solved by this technology:
- Efficiently creating grooves and openings in the semiconductor substrate and mask layer
- Precisely exposing the insulating layer
- Facilitating the dicing process for cutting the semiconductor substrate
Benefits of this technology:
- Improved manufacturing efficiency
- Enhanced precision in creating grooves and openings
- Simplified dicing process for cutting the semiconductor substrate
Original Abstract Submitted
A method of manufacturing a semiconductor package, includes forming a mask layer on a wafer, the wafer including a semiconductor substrate and an insulating layer; forming a groove in the semiconductor substrate by performing a first laser grooving process; expanding an opening of the mask layer opened by the first laser grooving process by performing a second laser grooving process; exposing a portion of the insulating layer by removing a portion of the mask layer; and cutting the semiconductor substrate while removing the portion of the insulating layer exposed during the exposing by performing a dicing process.
