18188196. Metal-Insulator-Metal Capacitors And Methods Of Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Metal-Insulator-Metal Capacitors And Methods Of Forming The Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Li Chung Yu of Kaohsiung City (TW)
Shin-Hung Tsai of Hsinchu City (TW)
Cheng-Hao Hou of Hsinchu City (TW)
Hsiang-Ku Shen of Hsinchu City (TW)
Chen-Chiu Huang of Taichung City (TW)
Metal-Insulator-Metal Capacitors And Methods Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18188196 titled 'Metal-Insulator-Metal Capacitors And Methods Of Forming The Same
Simplified Explanation
The patent application describes a method for creating semiconductor structures using high-K dielectric layers.
- Deposit a first conductive material layer on a substrate.
- Pattern the first conductive material layer to form a first conductor plate.
- Form a first high-K dielectric layer over the first conductor plate.
- Form a second high-K dielectric layer on top of the first high-K dielectric layer.
- Form a third high-K dielectric layer on top of the second high-K dielectric layer.
- Form a second conductor plate over the third high-K dielectric layer, vertically overlapped with the first conductor plate.
Potential Applications
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
- Improving performance and efficiency of semiconductor devices
- Enhancing signal transmission and conductivity
- Reducing power consumption
Benefits
- Higher performance capabilities
- Increased efficiency
- Lower power consumption
- Enhanced signal transmission
Original Abstract Submitted
Semiconductor structures and methods are provided. An exemplary method includes depositing a first conductive material layer over a substrate, patterning the first conductive material layer to form a first conductor plate over the substrate, forming a first high-K dielectric layer over the first conductor plate, forming a second high-K dielectric layer on the first high-K dielectric layer, forming a third high-K dielectric layer on the second high-K dielectric layer, and forming a second conductor plate over the third high-K dielectric layer and vertically overlapped with the first conductor plate, where a composition of the first high-K dielectric layer is the same as a composition of the third high-K dielectric layer and is different from a composition of the second high-K dielectric layer.
