17454830. FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUCTURE simplified abstract (International Business Machines Corporation)

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FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUCTURE

Organization Name

International Business Machines Corporation

Inventor(s)

Markus Scherrer of Zurich (CH)

Kirsten Emilie Moselund of Ruschlikon (CH)

Preksha Tiwari of Zurich (CH)

Noelia Vico Trivino of Zurich (CH)

FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17454830 titled 'FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUCTURE

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device. Here is a simplified explanation of the abstract:

  • The method starts by providing a cavity structure that includes a seed area with a seed material.
  • A first embedding layer is grown within the cavity structure in a specific direction from the seed surface of the seed material.
  • The seed material is then removed, and a quantum dot structure is grown in a different direction from the seed surface of the first embedding layer.
  • Finally, a second embedding layer is grown within the cavity structure on the surface of the quantum dot structure, also in the second growth direction.

Potential applications of this technology:

  • Semiconductor devices such as transistors, diodes, or solar cells.
  • Optoelectronic devices like light-emitting diodes (LEDs) or lasers.
  • Quantum computing and communication devices.

Problems solved by this technology:

  • Provides a method for fabricating semiconductor devices with precise control over the growth direction of different layers.
  • Enables the creation of complex structures within the cavity structure, such as quantum dot structures, which have unique electronic and optical properties.
  • Allows for the integration of different materials with varying properties into a single device.

Benefits of this technology:

  • Improved performance and efficiency of semiconductor devices due to precise control over the growth direction of layers.
  • Enhanced functionality and versatility of devices by incorporating quantum dot structures.
  • Potential for the development of advanced technologies in fields like quantum computing and optoelectronics.


Original Abstract Submitted

The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

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