18151304. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Yen Lin of New Taipei City (TW)

Po-Cheng Tsai of Taichung City (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151304 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The method described in the abstract involves forming a gate dielectric layer, a 2-D material layer, and source/drain contacts over the 2-D material layer in a semiconductor device fabrication process.

• Forming a gate dielectric layer over a gate electrode layer
• Forming a 2-D material layer over the gate dielectric layer
• Forming source/drain contacts over source/drain regions of the 2-D material layer, with each contact including an antimonene layer and a metal layer
• Removing a portion of the 2-D material layer exposed by the source/drain contacts, leaving a channel region over the gate dielectric layer

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices, particularly in the field of nanoelectronics.

Problems Solved

This technology solves the problem of improving the performance and efficiency of semiconductor devices by utilizing 2-D materials in the fabrication process.

Benefits

The use of 2-D materials in semiconductor device fabrication can lead to enhanced device performance, reduced power consumption, and potentially smaller device footprints.

Potential Commercial Applications

• Enhancing the performance of transistors in electronic devices
• Improving the efficiency of integrated circuits

Possible Prior Art

There may be prior art related to the use of 2-D materials in semiconductor device fabrication processes, but specific examples are not provided in this abstract.

How does this technology compare to traditional semiconductor fabrication methods?

The article does not provide a direct comparison between this technology and traditional semiconductor fabrication methods.

What are the specific properties of antimonene that make it suitable for use in source/drain contacts?

The abstract mentions the use of antimonene in the source/drain contacts, but does not elaborate on the specific properties of antimonene that make it a suitable material for this application.

Original Abstract Submitted

A method includes forming a gate dielectric layer over a gate electrode layer; forming a 2-D material layer over the gate dielectric layer; forming source/drain contacts over source/drain regions of the 2-D material layer, in which each of the source/drain contacts includes an antimonene layer and a metal layer over the antimonene layer; and after forming the source/drain contacts, removing a first portion of the 2-D material layer exposed by the source/drain contacts, while leaving a second portion of the 2-D material layer remaining over the gate dielectric layer as a channel region.