17530971. SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH simplified abstract (International Business Machines Corporation)

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SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH

Organization Name

International Business Machines Corporation

Inventor(s)

Devika Sarkar Grant of Rensselaer NY (US)

Somnath Ghosh of Clifton Park NY (US)

SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH - A simplified explanation of the abstract

This abstract first appeared for US patent application 17530971 titled 'SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH

Simplified Explanation

The patent application describes structures in semiconductor devices and methods for forming these structures. Here is a simplified explanation of the abstract:

  • A hard mask layer is etched to create a patterned hard mask.
  • The interconnect layer is etched using the hard mask to create multiple metal lines.
  • The hard mask is then removed.
  • A portion of the liner layer deposited directly on the dielectric layer is etched, and the remaining portion is deposited between the metal lines and the dielectric layer.

Potential Applications:

  • Semiconductor device manufacturing
  • Integrated circuit fabrication
  • Electronics industry

Problems Solved:

  • Efficient patterning of metal lines in semiconductor devices
  • Removal of unwanted portions of the liner layer
  • Ensuring proper deposition of the liner layer between metal lines and the dielectric layer

Benefits:

  • Improved precision and accuracy in creating metal lines
  • Enhanced performance and reliability of semiconductor devices
  • Cost-effective manufacturing process


Original Abstract Submitted

Structures in semiconductor devices, and methods for forming the structures, are described. In one embodiment, a hard mask layer of a deposition stack can be etched to pattern a hard mask. An interconnect layer of the deposition stack can be etched using the hard mask to pattern a plurality of metal lines. The hard mask can be removed. A liner layer of the deposition stack can be etched to remove a portion of the liner layer deposited directly on a dielectric layer of the deposition stack. In response to etching the liner layer, a remaining portion of the liner layer can be deposited between the metal lines and the dielectric layer.

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