18086380. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS EMPLOYING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS EMPLOYING THE SAME
Organization Name
Inventor(s)
Kyungwook Hwang of Suwon-si (KR)
Joonyong Park of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS EMPLOYING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18086380 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS EMPLOYING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device using a membrane forming pattern on a substrate. Here is a simplified explanation of the abstract:
- The method starts by creating a pattern on a substrate that will serve as the base for the semiconductor device.
- A layer of membrane material is then deposited on the substrate, covering the pattern.
- The membrane material layer is crystallized to form a membrane with a protruding pattern.
- A two-dimensional (2D) material pattern is grown on the protruding pattern of the membrane.
- Finally, the 2D material pattern is transferred to a different substrate.
Potential applications of this technology:
- Manufacturing of advanced semiconductor devices.
- Creation of high-performance electronic components.
- Development of novel sensors and detectors.
- Integration of 2D materials into existing semiconductor technologies.
Problems solved by this technology:
- Provides a method for manufacturing semiconductor devices with precise patterns and structures.
- Enables the integration of 2D materials into semiconductor devices.
- Offers a way to transfer the 2D material pattern to a different substrate without damaging it.
Benefits of this technology:
- Allows for the creation of complex semiconductor devices with improved performance.
- Enables the use of 2D materials, which possess unique properties, in semiconductor technologies.
- Provides a scalable and efficient method for manufacturing semiconductor devices.
- Facilitates the integration of different materials and structures in semiconductor devices.
Original Abstract Submitted
A method of manufacturing a semiconductor device, including: forming a membrane forming pattern on a substrate; forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern; forming a membrane having a protruding pattern by crystallizing the membrane material layer; forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane; and transferring the 2D material pattern to a transfer substrate
